Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements
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United States of America Patent
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Oct 13, 2020
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May 23, 2019
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Jun 26, 2017
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Jun 28, 2016
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Abstract
A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.
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