Intelligent semiconductor device having SiGe quantum well
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United States of America Patent
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Sep 29, 2020
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N/A
app pub date -
Jun 25, 2019
filing date -
Sep 12, 2018
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Abstract
An intelligent semiconductor device has a body region in which a channel is formed. The body region has a heterojunction of different semiconductor layers and a quantum well formed in a semiconductor layer in contact with a drain. The quantum well is configured to store holes generated in a depletion layer of the drain region and imitate a short-term memory, and to convert the short-term memory into a long-term memory by enabling holes to be injected into a charge storage layer when the holes stored in quantum well exceed a specific threshold value. It is possible to fabricate with a bulk semiconductor substrate and utilize the conventional CMOS technology.
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