Solar cell, solar cell module, and production method for solar cell

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United States of America Patent

PATENT NO 10784396
APP PUB NO 20170179315A1
SERIAL NO

15393870

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Abstract

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An n-type low-doped region and a first main-surface side highly doped region, which has an n-type dopant concentration higher than that in the n-type low-doped region, are provided in an n-type crystalline silicon substrate. The first main-surface side highly doped region is arranged between the n-type low-doped region and a p-type amorphous silicon layer.

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Patent Owner(s)

Patent OwnerAddress
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD22-6 MOTO-MACHI KADOMA-SHI OSAKA 5710057 ?5710057

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsuyama, Kenta Osaka, JP 10 6
Shigematsu, Masato Osaka, JP 22 115
Tohoda, Satoshi Osaka, JP 25 140

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