Phase changeable memory device and semiconductor integrated circuit device including the same
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United States of America Patent
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Sep 15, 2020
Grant Date -
Jun 13, 2019
app pub date -
Feb 13, 2019
filing date -
Nov 26, 2014
priority date (Note) -
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Abstract
A semiconductor integrated circuit device and a fabrication method thereof are disclosed. The resistive memory device includes a lower electrode, a resistive layer formed in a resistance change region on the lower electrode, an upper electrode formed on the resistive layer, and an insertion layer configured to allow a reset current path of the resistive layer, which is formed from the upper electrode to the lower electrode, to be bypassed in a direction perpendicular to or parallel to a surface of the lower electrode.
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