Lateral insulated-gate bipolar transistor and manufacturing method therefor
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United States of America Patent
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Sep 8, 2020
Grant Date -
Aug 8, 2019
app pub date -
Jun 21, 2017
filing date -
Jun 21, 2016
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Abstract
A lateral insulated-gate bipolar transistor and a manufacturing method therefor. The lateral insulated-gate bipolar transistor comprises a substrate, an anode terminal and a cathode terminal on the substrate, and a drift region and a gate electrode located between the anode terminal and the cathode terminal. The anode terminal comprises an N-shaped buffer zone on the substrate, a P well in the N-shaped buffer zone, an N+ zone in the P well, a groove located above the N+ zone and partially encircled by the P well, polycrystalline silicon in the groove, P+ junctions at two sides of the groove, and N+ junctions at two sides of the P+ junctions.
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