Semiconductor device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 18, 2020
Grant Date -
Oct 31, 2019
app pub date -
Jul 8, 2019
filing date -
Feb 3, 2017
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device has an element part and an outer peripheral part, and a deep layer is formed in the outer peripheral part more deeply than a base layer. When a position of the deep layer closest to the element part is defined as a boundary position, a distance between the boundary position and a position closest to the outer peripheral part in an emitter region is defined as a first distance, and a distance between the boundary position and a position of an end of a collector layer is defined as a second distance, the first distance and the second distance are adjusted such that a carrier density in the outer peripheral part is lowered based on breakdown voltage in the outer peripheral part lowered by the deep layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully