Measuring height difference in patterns on semiconductor wafers
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United States of America Patent
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Aug 18, 2020
Grant Date -
Nov 22, 2018
app pub date -
May 17, 2018
filing date -
May 18, 2017
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Abstract
An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.
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