Compound semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10734508
APP PUB NO 20180138302A1
SERIAL NO

15710233

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Abstract

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A compound semiconductor device includes a first transistor formed on a GaN epitaxial layer. The first transistor includes a gate electrode, a source electrode, a drain electrode, and a protective film covering them. End portions of the first transistor do not overhang the protective film, and the concentration of fluorine in the GaN epitaxial layer in the region where the gate electrode of the first transistor is formed is substantially zero.

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Patent Owner(s)

Patent OwnerAddress
ADVANTEST CORPORATION1-6-2 MARUNOUCHI CHIYODA-KU TOKYO 100-0005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okayasu, Jun'ichi Tokyo, JP 2 5
Sato, Taku Tokyo, JP 26 161

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