Method and device of remaining life prediction for electromigration failure

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United States of America Patent

PATENT NO 10732216
APP PUB NO 20180188316A1
SERIAL NO

15910766

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Abstract

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A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime τ1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point τ2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time τ3, acquiring a remaining life of electromigration failure corresponding to τ2′ based on τ1, τ2 and τ3. A device for remaining life prediction for electromigration failure is also disclosed.

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Patent Owner(s)

Patent OwnerAddress
FIFTH ELECTRONICS RESEARCH INSTITUTE OF MINISTRY OF INDUSTRY AND INFORMATION TECHNOLOGYNO 78 ZHUCUN AVENUE WEST ZHUCUN STREET ZENGCHENG DISTRICT GUANGZHOU GUANGDONG 511370 GUANGZHOU CITY GUANGDONG PROVINCE 511370

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yiqiang Guangdong, CN 13 16
En, Yunfei Guangdong, CN 10 38
Huang, Yun Guangdong, CN 58 346
Lu, Yudong Guangdong, CN 6 13
Zhang, Xiaowen Guangdong, CN 75 153

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