Group III nitride laminate and vertical semiconductor device having the laminate

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United States of America Patent

PATENT NO 10731274
APP PUB NO 20190323146A1
SERIAL NO

16312885

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Abstract

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A group III nitride laminate having monocrystalline n-type AlxGa1-xN (0.7≤X≤1.0) and an electrode is provided. The group III nitride laminate is characterized in that an n-type contact layer made of (AlYGa1-Y)2O3 (0.0≤Y<0.3) is provided between the monocrystalline n-type AlxGa1-xN (0.7≤X≤1.0) and the electrode. Furthermore, a vertical semiconductor device including the above-described group III nitride laminate is provided.

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Patent Owner(s)

Patent OwnerAddress
STANLEY ELECTRIC CO LTD2-9-13 NAKAMEGURO MEGURO-KU TOKYO 1538636 ?1538636

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kinoshita, Toru Tokyo, JP 28 252
Kumagai, Yoshinao Tokyo, JP 28 183
Murakami, Hisashi Tokyo, JP 32 266

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