Rounded shaped transistors for memory devices

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United States of America Patent

PATENT NO 10727251
SERIAL NO

16207730

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Abstract

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The present disclosure relates to semiconductor structures and, more particularly, to rounded shaped transistors and methods of manufacture. The structure includes a gate structure composed of a metal electrode and a rounded ferroelectric material which overlaps an active area in a width direction into an isolation region.

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Patent Owner(s)

Patent OwnerAddress
GLOBALFOUNDRIES U S INC2600 GREAT AMERICA WAY SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dünkel, Stefan Dresden, DE 10 5
Müller, Johannes Dresden, DE 21 28
Müller-Meskamp, Lars Dresden, DE 6 1

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