Slurry and manufacturing semiconductor using the slurry
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United States of America Patent
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Jul 28, 2020
Grant Date -
Apr 30, 2020
app pub date -
Oct 25, 2018
filing date -
Oct 25, 2018
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Abstract
The present disclosure provides a method for planarizing a metal-dielectric surface. The method includes: providing a slurry to a first metal-dielectric surface, wherein the first metal-dielectric surface comprises a silicon oxide portion and a metal portion, and wherein the slurry comprises a ceria compound; and performing a chemical mechanical polish (CMP) operation using the slurry to simultaneously remove the silicon oxide portion and the metal portion. The present disclosure also provides a method for planarizing a metal-dielectric surface and a method for manufacturing a semiconductor.
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