Photosensitive resin composition, polyimide production method, and semiconductor device
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United States of America Patent
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Jul 21, 2020
Grant Date -
Mar 7, 2019
app pub date -
Aug 18, 2016
filing date -
Aug 21, 2015
priority date (Note) -
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Abstract
A photosensitive resin composition, ensuring that after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and a high-adhesion polyimide layer is obtained, and a polyimide using the photosensitive resin composition, can be provided. Furthermore, a semiconductor device in which after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and short circuiting or disconnection following a high-temperature storage test is unlikely to occur.
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