Photo mask and method of manufacturing semiconductor element using photo mask
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United States of America Patent
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Jul 21, 2020
Grant Date -
May 16, 2019
app pub date -
Nov 8, 2018
filing date -
Nov 15, 2017
priority date (Note) -
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Abstract
A photo mask includes a transparent substrate, a transflective member, and a light shielding member. The transparent substrate has a transflective region including a first region, a second region located in opposing lateral portions of the first region, and an edge region located adjacent to the first and second regions, and a light shielding region surrounding the transflective region. The transflective member is disposed in the first, second and edge regions under the transparent substrate, and has a different light transmittance in each of the first, second and edge regions. The light shielding member is disposed in the light shielding region under the transparent substrate, and defines an opening which exposes the transflective region. The light shielding member includes a long side extending in a first direction parallel to an upper surface of the transparent substrate and a short side extending in a second direction.
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