High-speed VCSEL device
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United States of America Patent
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Jul 7, 2020
Grant Date -
Feb 28, 2019
app pub date -
Aug 2, 2018
filing date -
Mar 4, 2016
priority date (Note) -
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Abstract
A Vertical Cavity Surface Emitting Laser (VCSEL) includes a reflecting surface of the VCSEL. A gain region is positioned on the distributed Bragg reflector that generates optical gain. The gain region comprises a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack. The current aperture confines a current flow in the gain region. A partially reflective surface and the reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface.
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