Semiconductor devices and methods of manufacturing the same
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United States of America Patent
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Jun 16, 2020
Grant Date -
Oct 18, 2018
app pub date -
Jun 12, 2018
filing date -
Jan 11, 2016
priority date (Note) -
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Abstract
A semiconductor device includes an active fin on a substrate, a gate structure on the active fin, a gate spacer structure on a sidewall of the gate structure, and a source/drain layer on at least a portion of the active fin adjacent the gate spacer structure. The gate spacer structure includes a wet etch stop pattern, an oxygen-containing silicon pattern, and an outgas sing prevention pattern sequentially stacked.
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