Semiconductor device having multiple lateral anti-diffusion films

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10685875
APP PUB NO 20190244856A1
SERIAL NO

16100646

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Abstract

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A semiconductor device includes a first semiconductor substrate, a first insulating film provided at the first semiconductor substrate and including a first recess portion on a surface portion thereof, a first metal film provided at the first recess portion and having a first surface exposed from the first insulating film, a second semiconductor substrate, a second insulating film provided at the second semiconductor substrate and including a second recess portion on a surface portion thereof, a second metal film provided at the second recess portion and having a second surface exposed from the second insulating film, first anti-diffusion films, and second anti-diffusion films provided at outer circumferential portions of the first anti-diffusion films. The second surface is joined to the first surface. The first anti-diffusion films are provided at the first recess portion and the second recess portion and cover the first metal film and the second metal film.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATIONTOKYO 108-0023

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hatano, Masaaki Yokkaichi Mie, JP 18 198

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