Magnetoresistance effect device and high frequency device
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United States of America Patent
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Jun 9, 2020
Grant Date -
Mar 14, 2019
app pub date -
Sep 6, 2018
filing date -
Sep 8, 2017
priority date (Note) -
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Abstract
Provided is a magnetoresistance effect device that functions as a high frequency device such as a high frequency filter or the like. The magnetoresistance effect device includes a magnetoresistance effect element having a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer, a first signal line configured to generate a high frequency magnetic field as a high frequency current flows, a direct current application terminal to which a power supply is able to be connected to cause a direct current to flow to the magnetoresistance effect element in a lamination direction, and an independent magnetic body configured to receive a high frequency magnetic field generated in the first signal line to oscillate magnetization and apply a magnetic field generated through the magnetization to the magnetoresistance effect element.
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