Semiconductor device

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United States of America Patent

PATENT NO 10680091
APP PUB NO 20190198652A1
SERIAL NO

16229613

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Abstract

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In a semiconductor device having a heterojunction type superjunction structure, a drain portion and a source portion are electrically connected to one of a two-dimensional electron gas layer and a two-dimensional hole gas layer, and a gate portion is prevented by an insulating region from directly contacting the one of the two-dimensional election gas layer and the two-dimensional hole gas layer.

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Patent Owner(s)

Patent OwnerAddress
DENSO CORPORATION1-1 SHOWA-CHO KARIYA-SHI AICHI 4488661 ?4488661

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iwata, Naotaka Nagoya, JP 19 301
Kushida, Tomoyoshi Nisshin, JP 18 166
Nagasato, Yoshitaka Toyota, JP 6 11
Sakaki, Hiroyuki Nagoya, JP 13 97

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