Semiconductor substrate
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United States of America Patent
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Jun 9, 2020
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N/A
app pub date -
Jul 13, 2017
filing date -
Jul 19, 2016
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Abstract
A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1×1021 (atoms/cm3) or more of particular atoms.
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