Electrostatic discharge protection structure, method for manufacturing an electrostatic discharge protection structure, and vertical thyristor structure

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United States of America Patent

PATENT NO 10672758
APP PUB NO 20180108648A1
SERIAL NO

15787124

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Abstract

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According an embodiment, an electrostatic discharge protection structure includes: a semiconductor layer doped with a dopant of a first doping type, a first well region extending from a surface of the semiconductor layer into the semiconductor layer, wherein the first well region is doped with a dopant of a second doping type opposite the first doping type; a second well region next to the first well region and extending from the surface of the semiconductor layer into the semiconductor layer, wherein the second well region is doped with a dopant of the first doping type; an isolation structure extending from the surface of the semiconductor layer into the semiconductor layer with a depth similar to the depth of at least one of the first well region or the second well region, wherein the isolation structure is arranged laterally adjacent to the first well region and the second well region.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AGGERMAN LAURA KAN ANG 1-12 PYRENE EBY BERG CITY NO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pompl, Stefan Landshut, DE 16 62
Schmenn, Andre Sachsenkam, DE 29 98
Vendt, Vadim Valentinovic Munich, DE 6 18
Willemen, Joost Munich, DE 9 57

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