Magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillation element
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United States of America Patent
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May 26, 2020
Grant Date -
N/A
app pub date -
Sep 9, 2019
filing date -
Jun 29, 2017
priority date (Note) -
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status (Latency Note)
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Abstract
There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe2TiSi.
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International Classification(s)
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- H03B:GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUEN....
- G11B:INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BET....
- G01R:MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC V....
- H01F:MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF M....
- H03H:IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONA....
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