Semiconductor device and method of manufacturing the same

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United States of America Patent

PATENT NO 10658365
APP PUB NO 20190081047A1
SERIAL NO

16052636

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Abstract

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A semiconductor device and method of manufacturing the same is provided in the present invention. The method includes the step of forming first mask patterns on a substrate, wherein the first mask patterns extend in a second direction and are spaced apart in a first direction to expose a portion of first insulating layer, removing the exposed first insulating layer to form multiple recesses in the first insulating layer, performing a surface treatment to the recess surface, filling up the recesses with a second insulating layer and exposing a portion of the first insulating layer, removing the exposed first insulating layer to form a mesh-type isolation structure, and forming storage node contact plugs in the openings of mesh-type isolation structure.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPNO 3 LI-HSIN ROAD 2 SCIENCE-BASED INDUSTRIAL PARK HSIN-CHU CITY
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTDNO 88 LIANHUA AVENUE INTEGRATED CIRCUIT SCIENCE PARK JINJIANG CITY QUANZHOU CITY FUJIAN PROVINCE 362200 QUANZHOU CITY FUJIAN PROVINCE 362200

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Chih-Chi Tainan, TW 13 53
Feng, Li-Wei Kaohsiung, TW 107 378
Lin, Ger-Pin Tainan, TW 28 91
Tsai, Chien-Cheng Kaohsiung, TW 20 39
Tzou, Shih-Fang Tainan, TW 96 596
Wu, Chia-Wei Taichung, TW 61 204

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