Memory device with a fuse protection circuit

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United States of America Patent

PATENT NO 10643726
APP PUB NO 20190252032A1
SERIAL NO

16392741

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A memory device includes a memory circuit and a fuse protection circuit. The memory circuit includes a memory cell and a program line. The memory cell includes a fuse. The program line is configured to receive a program voltage for programming the fuse. The fuse protection circuit is coupled to the memory circuit and is configured to prevent unintentional programming of the fuse.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDNO 8 LI-HSIN ROAD 6 HSIN-CHU SCIENCE PARK HSIN-CHU 300-78

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chih, Yu-Der Hsinchu, TW 195 382
Chou, Shao-yu Hsinchu, TW 95 379
Hung, Chen-Ming Hsinchu County, TW 23 224
Lee, Jam-Wem Hsinchu, TW 145 1286
Lee, Shu-Chuan Hsinchu, TW 15 65
Song, Ming-Hsiang Hsinchu, TW 60 569
Su, Yu-Ti Tainan, TW 80 242
Tseng, Jen-Chou Hsinchu County, TW 68 952

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