Memory device including OTP memory cell and program method thereof
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United States of America Patent
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Dec 13, 2018
app pub date -
Dec 20, 2017
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Dec 20, 2017
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Abstract
A memory device includes a main one-time programmable (OTP) memory cell connected to a main word line and a main bit line; a redundant OTP memory cell connected to a redundant word line and a redundant bit line; and an input/output circuit configured to, during a program operation to program the main OTP memory cell and the redundant OTP memory cell, electrically separate the main bit line and the redundant bit line and form a first program current path to the main bit line and a second program current path to redundant bit line, wherein the first program current path and the second program current path are independent from each other.
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