Method for preparing SiC single crystal
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United States of America Patent
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Oct 18, 2018
app pub date -
Apr 5, 2018
filing date -
Apr 5, 2018
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Abstract
A SiC single crystal is prepared by the solution process of placing a seed crystal in contact with a Si—C solution in a crucible and letting a SiC single crystal to grow from the seed crystal. The method includes the first growth step of conducting crystal growth using (0001) or (000-1) plane of a SiC single crystal of which the seed crystal is composed, as the growth surface, and the second growth step of conducting crystal growth using (1-100) or (11-20) plane of a SiC single crystal resulting from the first growth step as the growth surface. A SiC single crystal of high homogeneity and quality is obtained, which is reduced in threading screw dislocations, threading edge dislocations, basal plane dislocations, micropipes, and stacking faults.
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