Semiconductor device for directly converting radioisotope emissions into electrical power
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United States of America
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Mar 31, 2020
Grant Date -
Jul 25, 2019
app pub date -
Jan 20, 2019
filing date -
Jan 20, 2019
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Abstract
A device for producing electricity. In one embodiment, the device comprises a doped germanium or a doped GaAs substrate and a plurality of stacked material layers (some of which are doped) above the substrate. These stacked material layers, which capture the beta particles and generate electrical current, may include, in various embodiments, GaAs, InAlP, InGaP, InAlGaP, AlGaAs, and other semiconductor materials. A beta particle source generates beta particles that impinge the stack, create electron-hole pairs, and thereby generate electrical current. In another embodiment the device comprises a plurality of epi-liftoff layers and a backing support material.
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