Nitride semiconductor substrate and method for manufacturing the same

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United States of America

PATENT NO 10593790
SERIAL NO

15900202

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Abstract

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A structure for increasing the concentration of two-dimensional electron gas without lowering mobility is provided. That is, a nitride semiconductor substrate is provided which includes a first layer, a second layer, and a third layer. The first layer has a composition of Ina1Alb1Gac1N (0≤a1≤1, 0≤b1≤1, 0≤c1≤1, a1+b1+c1=1). The second layer is formed on the first layer. The second layer has a composition of Ina2Alb2Gac2N (0≤a2≤1, 0≤b2≤1, 0≤c2≤1, a2+b2+c2=1) and has a band gap different from that of the first layer. The third layer is formed on the second layer and has a composition of AjB1-jN (A is a group 13 element, B is a group 13 element or a group 14 element, A≠B, 0

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Patent Owner(s)

Patent OwnerAddress
COORSTEK GK11-1 OSAKI 2-CHOME SHINAGAWA-KU TOKYO 1410032

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abe, Yoshihisa Kanagawa, JP 49 490
Kobata, Masashi Kanagawa, JP 2 9
Miyamoto, Shintaro Kanagawa, JP 28 51

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