Method for producing field-effect transistor

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 10586873
APP PUB NO 20190027608A1
SERIAL NO

16131760

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Abstract

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A method for producing a field-effect transistor including first-oxide-layer and second-oxide-layer and forming front-channel or back-channel in region where the first-oxide-layer and the second-oxide-layer are adjacent to each other, the method including: forming second-precursor-layer, which is precursor of the second-oxide-layer, so as to be in contact with first-precursor-layer, which is precursor of the first-oxide-layer, and then converting the first-precursor-layer and the second-precursor-layer to the first-oxide-layer and the second-oxide-layer, respectively, the forming includes at least one of treatments (I) and (II) below: (I) treatment of: coating first-oxide-precursor-forming coating liquid that can form precursor of first oxide and contains solvent; and then removing the solvent to form the first-precursor-layer which is the precursor of the first-oxide-layer; and (II) treatment of: coating second-oxide-precursor-forming coating liquid that can form precursor of second oxide and contains solvent; and then removing the solvent to form the second-precursor-layer which is the precursor of the second-oxide-layer.

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Patent Owner(s)

Patent OwnerAddress
RICOH COMPANY LTD3-6 NAKAMAGOME 1-CHOME OHTA-KU TOKYO 143-8555

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abe, Yukiko Kanagawa, JP 66 696
Arae, Sadanori Kanagawa, JP 42 311
Kusayanagi, Minehide Kanagawa, JP 36 167
Matsumoto, Shinji Kanagawa, JP 210 3292
Nakamura, Yuki Tokyo, JP 266 1409
Saotome, Ryoichi Kanagawa, JP 51 403
Sone, Yuji Kanagawa, JP 73 672
Ueda, Naoyuki Kanagawa, JP 77 746

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