Multi-level air gap formation in dual-damascene structure
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United States of America
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Mar 10, 2020
Grant Date -
May 23, 2019
app pub date -
Jan 2, 2019
filing date -
Jan 2, 2019
priority date (Note) -
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Abstract
An upper layer is formed in a first interlayer dielectric (ILD) layer. The upper layer comprises a plurality of metal interconnects and one or more upper layer air gaps positioned between adjacent metal interconnects. A lower layer is formed in the first ILD layer. The lower layer comprises one or more vias, and one or more lower air gaps positioned between adjacent vias. The upper layer and the lower layer are formed in accordance with a dual-damascene process.
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