Tantalum sputtering target, and production method therefor
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United States of America
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Feb 25, 2020
Grant Date -
Apr 19, 2018
app pub date -
May 17, 2016
filing date -
May 17, 2016
priority date (Note) -
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Abstract
Provided is a tantalum sputtering target, which includes an area ratio of crystal grains of which a {111} plane is oriented in a direction normal to a rolling surface (ND) is 35% or more when the ND, which is a cross section orthogonal to a sputtering surface of a target, is observed via Electron Backscatter Diffraction Pattern method. The object of the present invention is to provide a tantalum sputtering target in which a sputtered material can be uniformly deposited on a wafer surface under high-power sputtering conditions by increasing the straightness of the sputtered material. By using this kind of tantalum target for sputter-deposition, it is possible to improve the film thickness uniformity and the throughput of deposition even for fine wiring.
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