Indium gallium arsenide metal oxide semiconductor field effect transistor having a low contact resistance to metal electrode
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United States of America
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Feb 11, 2020
Grant Date -
Jul 11, 2019
app pub date -
Mar 14, 2019
filing date -
Mar 14, 2019
priority date (Note) -
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Abstract
A semiconductor device that includes source and drain regions that are doped to an n-type conductivity and are comprised of a type III-V semiconductor material. The semiconductor device further includes a contact to at least one of the source and drain regions. The contact includes an interface passivation layer atop the at least one source and drain region, and an n-type zinc oxide layer. A conduction band of the type III-V semiconductor material of the at least one source and drain region is substantially aligned with a conduction band of the n-type zinc oxide containing layer.
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