Method and system for providing magnetic junctions utilizing metal oxide layer(s)

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 10553642
APP PUB NO 20190067366A1
SERIAL NO

15787524

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Abstract

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A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction resides on a substrate and is usable in a magnetic device. The magnetic junction includes a reference layer, a nonmagnetic spacer layer and a M-containing oxide layer adjacent to the free layer. M includes at least one of Ti, Al, Hf, Zr, Mo, V and Nb. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The nonmagnetic spacer layer is between the reference layer and the free layer. The free layer is between the nonmagnetic spacer layer and the M-containing oxide layer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-SI 16677

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feng, Gen North Potomac, US 11 40
Ikhtiar, null Milpitas, US 10 33
Krounbi, Mohamad Towfik San Jose, US 50 1093
Lee, Don Koun San Jose, US 8 14
Tang, Xueti Fremont, US 50 1143

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