Semiconductor device for avoiding short circuit between adjacent storage nodes and manufacturing method thereof

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 10546861
APP PUB NO 20190341385A1
SERIAL NO

16516204

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Abstract

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A semiconductor device and a manufacturing method thereof are provided. The method includes providing a substrate, a plurality of word lines and a plurality of bit lines, and then forming a storage node contact on each source/drain region, so that a width of a top surface of each storage node contact in a direction is less than a width of a bottom surface of each storage node contact.

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Patent Owner(s)

Patent OwnerAddress
UNITED MICROELECTRONICS CORPHSIN-CHU CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Feng, Li-Wei Kaohsiung, TW 107 378
Ho, Chien-Ting Taichung, TW 57 218
Liu, Tzu-Tsen Kaohsiung, TW 5 22

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