Method and apparatus for surface preparation prior to epitaxial deposition

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 10544519
APP PUB NO 20190062947A1
SERIAL NO

15687006

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Abstract

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During a pre-treat process, hydrogen plasma is used to remove contaminants (e.g., oxygen, carbon) from a surface of a wafer. The hydrogen plasma may be injected into the plasma chamber via an elongated injector nozzle. Using such elongated injector nozzle, a flow of hydrogen plasma with a significant radial velocity flows over the wafer surface, and transports volatile compounds and other contaminant away from the wafer surface to an exhaust manifold. A protective liner made from crystalline silicon or polysilicon may be disposed on an inner surface of the plasma chamber to prevent contaminants from being released from the surface of the plasma chamber. To further decrease the sources of contaminants, an exhaust restrictor made from silicon may be employed to prevent hydrogen plasma from flowing into the exhaust manifold and prevent volatile compounds and other contaminants from flowing from the exhaust manifold back into the plasma chamber.

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Patent Owner(s)

Patent OwnerAddress
AIXTRON SEKAISERSTR 98 HERZOGENRATH 52134

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cossentine, Dan Lester Santa Cruz, US 1 10
Karim, M Ziaul San Jose, US 37 1928
Kim, Hae Young San Jose, US 26 117
Mukherjee, Niloy Dublin, US 251 4133
Saldana, Miguel Angel Santa Cruz, US 9 56
Savas, Stephen Edward Pleasanton, US 16 564
Tamilmani, Subramanian Fremont, US 18 231

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