Method and apparatus for surface preparation prior to epitaxial deposition
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United States of America
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Jan 28, 2020
Grant Date -
Feb 28, 2019
app pub date -
Aug 25, 2017
filing date -
Aug 25, 2017
priority date (Note) -
In Force
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Abstract
During a pre-treat process, hydrogen plasma is used to remove contaminants (e.g., oxygen, carbon) from a surface of a wafer. The hydrogen plasma may be injected into the plasma chamber via an elongated injector nozzle. Using such elongated injector nozzle, a flow of hydrogen plasma with a significant radial velocity flows over the wafer surface, and transports volatile compounds and other contaminant away from the wafer surface to an exhaust manifold. A protective liner made from crystalline silicon or polysilicon may be disposed on an inner surface of the plasma chamber to prevent contaminants from being released from the surface of the plasma chamber. To further decrease the sources of contaminants, an exhaust restrictor made from silicon may be employed to prevent hydrogen plasma from flowing into the exhaust manifold and prevent volatile compounds and other contaminants from flowing from the exhaust manifold back into the plasma chamber.

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Patent Owner(s)
Patent Owner | Address | |
---|---|---|
AIXTRON SE | KAISERSTR 98 HERZOGENRATH 52134 |
International Classification(s)

- [Classification Symbol]
- [Patents Count]
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Cossentine, Dan Lester | Santa Cruz, US | 1 | 10 |
Karim, M Ziaul | San Jose, US | 37 | 1928 |
Kim, Hae Young | San Jose, US | 26 | 117 |
Mukherjee, Niloy | Dublin, US | 251 | 4133 |
Saldana, Miguel Angel | Santa Cruz, US | 9 | 56 |
Savas, Stephen Edward | Pleasanton, US | 16 | 564 |
Tamilmani, Subramanian | Fremont, US | 18 | 231 |
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