Laser device and process for fabricating such a laser device

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United States of America

PATENT NO 10511147
SERIAL NO

15992573

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Abstract

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The invention relates to a III-V heterostructure laser device (1) arranged in and/or on silicon, comprising:

    a III-V heterostructure gain medium (3); andan optical rib waveguide (11), arranged facing the gain medium (3) and comprising a slab waveguide (15) equipped with a longitudinal rib (17), the optical rib waveguide (11) being arranged in the silicon.

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Patent Owner(s)

Patent OwnerAddress
STMICROELECTRONICS FRANCE29 BOULEVARD ROMAIN ROLLAND MONTROUGE 92120

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ben, Bakir Badhise Brezins, FR 26 244
Chantre, Alain Seyssins, FR 34 314
Cremer, Sebastien Sassenage, FR 22 114
Duprez, Helene Seyssinet-Pariset, FR 4 40
Ferrotti, Thomas Grenoble, FR 3 32

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