Semiconductor device and method of manufacturing the same
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United States of America Patent
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Nov 19, 2019
Grant Date -
May 16, 2019
app pub date -
Jan 9, 2019
filing date -
Jul 8, 2016
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Abstract
A method of manufacturing a semiconductor device includes forming a first insulating film having a first thickness over a main surface of a semiconductor substrate and then forming a second insulating film having a second thickness larger than the first thickness over the first insulating film, sequentially processing the second insulating film, the first insulating film, and the semiconductor substrate to form a plurality of trenches and to form a plurality of projecting portions which include portions of the semiconductor substrate extending in a first direction along the main surface of the semiconductor substrate and are spaced apart from each other in a second direction orthogonal to the first direction along the main surface of the semiconductor substrate, and depositing a third insulating film over the main surface of the semiconductor substrate such that the third insulating film is embedded in the trenches.
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