Semiconductor device and method of manufacturing the same
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United States of America Patent
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Nov 12, 2019
Grant Date -
May 30, 2019
app pub date -
Jan 31, 2019
filing date -
Jan 13, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
Performance of a semiconductor device is improved without increasing an area size of a semiconductor chip. For example, a source electrode of a power transistor and an upper electrode of a capacitor element have an overlapping portion. In other word, the upper electrode of the capacitor element is formed over the source electrode of the power transistor through a capacitor insulating film. That is, the power transistor and the capacitor element are arranged in a laminated manner in a thickness direction of the semiconductor chip. As a result, it becomes possible to add a capacitor element to be electrically coupled to the power transistor while suppressing an increase in planar size of the semiconductor chip.
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