Oxide for semiconductor layer of thin film transistor, sputtering target, and thin film transistor
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United States of America Patent
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Nov 5, 2019
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Jan 10, 2013
app pub date -
Apr 7, 2011
filing date -
Apr 7, 2010
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Abstract
Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W.
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