Semiconductor device and power converter
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United States of America Patent
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Nov 5, 2019
Grant Date -
Mar 30, 2017
app pub date -
May 25, 2016
filing date -
Sep 24, 2015
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Abstract
There is provided a semiconductor device comprising a substrate, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a trench and an insulating film arranged to cover a surface of the trench. The first semiconductor layer has a carrier concentration that provides a peak in a thickness direction perpendicular to a plane direction. A high carrier concentration area having a peak of the carrier concentration in the first semiconductor layer is extended in the plane direction at a location away from the trench to be located on the substrate side of the trench. This configuration reduces the on resistance while suppressing reduction of the breakdown voltage in the semiconductor device.
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