SiC single crystal and method for producing same
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United States of America Patent
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Oct 22, 2019
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Aug 18, 2016
app pub date -
Aug 27, 2014
filing date -
Sep 27, 2013
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Abstract
Provided is a SiC single crystal that has a large growth thickness and contains no inclusions. A SiC single crystal grown by a solution process, wherein the total length M of the outer peripheral section formed by the {1-100} faces on the {0001} growth surface of the SiC single crystal, and the length P of the outer periphery of the growth surface of the SiC single crystal, satisfy the relationship M/P≤0.70, and the length in the growth direction of the SiC single crystal is 2 mm or greater.
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