Method for producing light-emitting device
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United States of America Patent
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Oct 15, 2019
Grant Date -
Mar 28, 2019
app pub date -
Sep 24, 2018
filing date -
Sep 28, 2017
priority date (Note) -
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status (Latency Note)
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Abstract
To remove the mask formed by nanoimprinting after dry etching. A mask is formed by nanoimprinting on a back surface of a substrate. Subsequently, dry etching is performed using chlorine gas. Dry etching is finished with the mask kept remaining. A deteriorated layer is formed on the surface of the remaining mask. The mask is irradiated with plasma generated using a mixture gas of nitrogen and oxygen. Thereby, the deteriorated layer formed on the surface of the mask is removed by evaporation. The mask is removed by dissolving in BHF (buffered hydrofluoric acid).
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