Termination implant enrichment for shielded gate MOSFETS
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United States of America Patent
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Oct 15, 2019
Grant Date -
May 23, 2019
app pub date -
Jan 25, 2019
filing date -
Apr 28, 2017
priority date (Note) -
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status (Latency Note)
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Abstract
In a general aspect, a power semiconductor device can include a first trench shield electrode and a second trench shield electrode defined in a semiconductor region, the first and second trench shield electrodes each having a first portion disposed in an active region and a second portion disposed in a termination region. A trench of the first trench shield electrode and a trench of the second trench shield electrode can define a mesa of the semiconductor region therebetween. The device can further include an implant enrichment region disposed in the termination region, the implant enrichment region can have a plurality of segments, at least one of the segments being disposed in the mesa. The trench shield electrodes can be disposed between segments of the implant enrichment region.
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