Field-effect transistor with protection diodes
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United States of America
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Oct 8, 2019
Grant Date -
Aug 10, 2017
app pub date -
Sep 29, 2016
filing date -
Sep 29, 2016
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Abstract
A field-effect transistor with protection diodes includes: a field-effect transistor; and a two-terminal electrostatic protection circuit connected between a gate and a source of the field-effect transistor, wherein the two-terminal electrostatic protection circuit comprises: a first diode that is positioned on a reverse-biased side when a voltage lower than a potential of the source is applied to the gate and has a reverse withstand voltage lower than a reverse withstand voltage between the gate and the source of the field-effect transistor; a second diode that is positioned on a forward-biased side when a voltage lower than a potential of the source is applied to the gate and is connected in anti-series to the first diode; and a resistor that is connected in series to a diode pair comprising the first diode and the second diode and formed using a same channel layer as that of the field-effect transistor.
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