MEMS isolation structures

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United States of America Patent

PATENT NO 10435291
APP PUB NO 20180029879A1
SERIAL NO

15728435

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Abstract

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A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.

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Patent Owner(s)

Patent OwnerAddress
DIGITALOPTICS CORPORATION MEMSARCADIA CA

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Calvet, Robert J Pasadena, US 66 1471
Gutierrez, Roman C Arcadia, US 136 2575
Jain, Ankur Cerritos, US 146 2236
Lee, Shi-Sheng Arcadia, US 7 57
Liu, Xiaolei South Pasadena, US 115 570

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