Method of analyzing lattice strain of semiconductor device
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United States of America
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Sep 10, 2019
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Jan 11, 2018
app pub date -
Feb 1, 2017
filing date -
Feb 1, 2017
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Abstract
A method of analyzing lattice strain of a semiconductor device includes generating a spectrum image by performing a Fourier Transform on an image of a semiconductor device, providing a first hybrid mask filter t filter designed to select at least one peak frequency from the spectrum image, filtering the spectrum image using the first hybrid mask filter to generate a filtered spectrum image, and generating a first strain image by performing an inverse Fourier Transform on the filtered spectrum image.
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