High-frequency amplifier apparatuses
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United States of America Patent
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Aug 27, 2019
Grant Date -
May 3, 2018
app pub date -
Dec 27, 2017
filing date -
Jun 30, 2015
priority date (Note) -
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Abstract
High-frequency amplifier apparatuses suitable for producing output powers of at least 1 kW at frequencies of at least 2 MHz for plasma excitation are disclosed. These high-frequency amplifiers include two transistors, the source or emitter connections of which are each connected to a ground connection point. The transistors can have an identical design and are arranged on a multilayer printed circuit board. The apparatus also includes a power transformer, the primary winding of which is connected to the drain or collector connections of the transistors. The primary winding and the secondary winding of the power transformer are each in the form of planar conductor tracks which are arranged in different upper layers of the multilayer printed circuit board.
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