Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
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United States of America Patent
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Aug 27, 2019
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Jan 17, 2019
app pub date -
Aug 4, 2016
filing date -
Oct 13, 2015
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Abstract
A silicon carbide epitaxial substrate includes a silicon carbide single crystal substrate and a silicon carbide layer. The silicon carbide single crystal substrate has a first main surface. The silicon carbide layer is on the first main surface. The silicon carbide layer includes a second main surface opposite to a surface thereof in contact with the silicon carbide single crystal substrate. The second main surface has a maximum diameter of more than or equal to 100 mm. The second main surface includes an outer peripheral region which is within 3 mm from an outer edge of the second main surface, and a central region surrounded by the outer peripheral region. The central region has a haze of less than or equal to 75 ppm.
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