Chromeless phase shift mask structure and process

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10394114
APP PUB NO 20180059531A1
SERIAL NO

15597992

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Abstract

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The present disclosure provides a phase shift mask. The phase shift mask includes a transparent substrate; an etch stop layer disposed on the substrate; and a tunable transparent material layer disposed on the etch stop layer and patterned to have an opening, wherein the tunable transparent material layer is designed to provide phase shift and has a transmittance greater than 90%.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Hsin-Chang Hsinchu County, TW 203 1090
Lin, Yun-Yue Hsinchu, TW 77 363

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