Low resistance and leakage device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10388778
APP PUB NO 20180145165A1
SERIAL NO

15355769

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Abstract

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A heterojunction semiconductor device is disclosed. The heterojunction semiconductor device includes a substrate and a multilayer structure disposed on the substrate. The multilayer structure includes a first layer comprising a first semiconductor disposed on top of the substrate, and a second layer comprising a second semiconductor disposed on top of the first layer to define an interface between the first layer and the second layer. The second semiconductor is different from the first semiconductor such that a Two-Dimensional Electron Gas forms adjacent to the interface. The device also includes a first terminal electrically coupled to a first area of the interface between the first layer and second layer and a second terminal electrically coupled to a second area of the interface between the first layer and second layer. The device also includes an electrically conducting channel comprising an implanted region at bottom and sidewalls. The electrically conducting channel is filled with a metal and the electrically conducting channel connects the second terminal and a region of the first layer such that electric charge can flow between the second terminal and the first layer.

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Patent Owner(s)

Patent OwnerAddress
NEXPERIA B VJONKERBOSPLEIN 52 NIJMEGEN 6534AB

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pandey, Saurabh Manchester, GB 28 166
Sonsky, Jan Leuven, BE 45 488

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